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Properties of CeO/sub 2/ thin films prepared by oxygen-ion-assisted deposition

Journal Article · · Appl. Opt.; (United States)
DOI:https://doi.org/10.1364/AO.24.002267· OSTI ID:5412423

Thin films have been prepared by electron-beam evaporation of CeO/sub 2/, where the growing film has been bombarded with oxygen ions. The packing density of the films has been increased from approx. 0.55 without ion bombardment to unity with bombardment as determined by moisture adsorption measurements. The refractive index, extinction coefficient, and scattering loss are reported for a range of ion energies from 50 to 1200 eV. The ratio of ion-current density to film growth rate required to produce films that did not absorb moisture was found to be a minimum for ion energies in the 300--600-eV range. Absorption and scatter losses are smallest for the lower ion energies and the crystal structure of CeO/sub 2/ films is relatively stable under ion bombardment although ion-assisted films tend to be less crystalline than evaporated layers.

Research Organization:
CSIRO Division of Applied Physics, Sydney, 2070, Australia
OSTI ID:
5412423
Journal Information:
Appl. Opt.; (United States), Journal Name: Appl. Opt.; (United States) Vol. 24:14; ISSN APOPA
Country of Publication:
United States
Language:
English