Boron transient enhanced diffusion in heavily phosphorus doped silicon
- Univ. of Western Ontario, London, Ontario (Canada). Dept. of Physics
A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 {times} 10{sup 14} cm{sup {minus}2}, and then annealed at temperatures ranging from 700--1,000 C in a N{sub 2} ambient for varying durations. As P doping concentration increased from 3 {times} 10{sup 19} to 1 {times} 10{sup 20} cm{sup {minus}3}, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.
- OSTI ID:
- 541105
- Report Number(s):
- CONF-961202-; ISBN 1-55899-343-6; TRN: 97:019613
- Resource Relation:
- Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1997; Related Information: Is Part Of Microstructure evolution during irradiation; Robertson, I.M. [ed.] [Univ. of Illinois, Urbana, IL (United States)]; Was, G.S. [ed.] [Univ. of Michigan, Ann Arbor, MI (United States)]; Hobbs, L.W. [ed.] [Massachusetts Inst. of Tech., Cambridge, MA (United States)]; Diaz de la Rubia, T. [ed.] [Lawrence Livermore National Lab., CA (United States)]; PB: 752 p.; Materials Research Society symposium proceedings, Volume 439
- Country of Publication:
- United States
- Language:
- English
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