Point defects in undoped semi-insulating GaAs: Correlation between thermally stimulated current and positron annihilation spectroscopies

Conference · Tue Dec 31 00:00:00 EST 1996

OSTI ID:541078

Fang, Z Q; Look, D C ^[1]; Kuisma, S; Saarinen, K; Hautojarvi, P ^[2]

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1. Wright State Univ., Dayton, OH (United States). Physics Dept.
2. Helsinki Univ. of Technology, Espoo (Finland). Lab. of Physics

Point defects and the main electron traps in undoped semi-insulating GaAs grown by vertical gradient freeze and high- and low-pressure liquid encapsulated Czochralski techniques have been studied by positron annihilation (PAS) and thermally stimulated current (TSC) spectroscopies, respectively. The authors find good correlations between the concentrations of the TSC traps T{sub 2} (0.63 eV) and T{sub 5} (0.35 eV), and the PAS identified-defects As{sub Ga} and V{sub As}, respectively. A good correlation between the concentration of intrinsic acceptors (V{sub Ga} and Ga{sub As}) measured by PAS, and the total acceptor concentration measured by infrared absorption, is also found.

• Sponsoring Organization: Department of the Air Force, Washington, DC (United States)
• OSTI ID: 541078
• Report Number(s): CONF-960450-; ISBN 0-7803-3179-6; TRN: IM9747%%184
• Resource Relation: Conference: 10. international parallel processing symposium, Honolulu, HI (United States), 15-19 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Semiconducting and insulating materials 1996: Proceedings; PB: [395] p.
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
POINT DEFECTS
CORRELATIONS
ELECTRICAL PROPERTIES
DIAGNOSTIC TECHNIQUES