Investigation of lasing in the direction of a streamer channel in II-VI semiconductors

Journal Article · Wed Jun 01 04:00:00 EDT 1983 · Sov. J. Quant. Electron. (Engl. Transl.); (United States)

DOI:https://doi.org/10.1070/QE1983v013n06ABEH004282· OSTI ID:5398002

Obidin, A Z; Pechenov, A N; Popov, Y M; Frolov, V A

An investigation was made of the generation of light in II-VI semiconductors along a streamer channel. The establishment of a high gain amounting to (4--6) x 10/sup 3/ cm/sup -1/ inside a channel resulted in lasing in resonators with mirrors formed by optical inhomogeneities of a crystal. The radiation emitted in the direction of the streamer emerged from the lasing region and propagated through the bulk of the crystal, whereas in the opposite direction it traveled along an optical waveguide formed by the streamer channel. The angular distribution of the radiation in the forward direction was influenced by the Franz--Keldysh effect at the head of the streamer and by distortions of the light wave in secondary streamer channels. A considerable increase in the radiation energy in the forward direction observed at streamer velocities of at least 4 x 10/sup 9/ cm/sec was attributed to the attainment by the streamer head of a velocity higher than the group velocity of light at the wavelength of the emitted radiation.

• Research Organization: P. N. Lebedev Physics Institute, Academy of Sciences of the USSR, Moscow
• OSTI ID: 5398002
• Journal Information: Sov. J. Quant. Electron. (Engl. Transl.); (United States), Journal Name: Sov. J. Quant. Electron. (Engl. Transl.); (United States) Vol. 13:6; ISSN SJQEA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ANGULAR DISTRIBUTION
DISTRIBUTION
GAIN
LASERS
RADIATION STREAMING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPECIFICATIONS