Semiconductor streamer lasers

Journal Article · Mon Aug 01 04:00:00 EDT 1977 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1977.1069415· OSTI ID:5267935

Basov, N G; Molchanov, A G; Nasibov, A S; Obidin, A Z; Pechenov, A N; Popov, Yu M

A new method of electrically exciting generation of light behind the ionization front in streamers is theoretically and experimentally considered. Light intensity of approximately 10/sup 9/ W/cm/sup 2/ was generated in Cd/sub x/Se/sub 1-x/ and ZnSe crystals from radiation regions having characteristic dimensions of approximately 5 ..mu..m, and moving with velocities approximately 3.10/sup 8/ cm/s.

• Research Organization: Lebedev Inst. of Physics, Moscow
• OSTI ID: 5267935
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-13:8; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CADMIUM COMPOUNDS
CADMIUM SELENIDES
CADMIUM SULFIDES
CHALCOGENIDES
ELECTRICAL PUMPING
INORGANIC PHOSPHORS
LASERS
PHOSPHORS
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SULFIDES
SULFUR COMPOUNDS
ZINC COMPOUNDS
ZINC SELENIDES
ZINC SULFIDES