Resistive gate field effect transistor logic family

Patent · Tue Jul 22 04:00:00 EDT 1986

OSTI ID:5396520

Bertin, C L

A field effect transistor logic circuit is described which consists of: a resistive gate field effect transistor device having a gate electrode composed of a resistive material and at least two input electrodes attached to different portions of the resistive gate, each input electrode being responsive to an independent logic level input signal to independently control the conductivity of different portions of the field effect transistor device channel region as a function of the logic states of the logic level input signals.

• Assignee: International Business Machines Corp., Armonk, NY
• Patent Number(s): US 4602170
• OSTI ID: 5396520
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CIRCUIT THEORY
DESIGN
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRODES
ELECTRONIC CIRCUITS
FIELD EFFECT TRANSISTORS
GATING CIRCUITS
LOGIC CIRCUITS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SIGNALS
TRANSISTORS