Lateral field effect in focused-ion-beam written in-plane-gated systems

Conference · Sun May 05 00:00:00 EDT 1991 · AIP Conference Proceedings (American Institute of Physics); (United States)

OSTI ID:5394548

Wieck, A D; Fischer, A; Ploog, K ^[1]

---

1. Max-Planck-Institut fuer Festkoerperforschung, D-7000 Stuttgart 80 (Germany)

We define one dimensional channels and adjacent In-Plane-Gates in a single step preparation by linewise insulating an Al{sub 0.3}Ga{sub 0.7}As/GaAs n-type heterostructure. Channel and gates consist of the same electronic layer, which leads to lateral electric field effect with high flexibility in microstructure design.

• OSTI ID: 5394548
• Report Number(s): CONF-9105134-; CODEN: APCPC; TRN: 92-016200
• Journal Information: AIP Conference Proceedings (American Institute of Physics); (United States), Vol. 227:1; Conference: 2. international meeting on advanced processing and characterization technologies, Clearwater, FL (United States), 8-10 May 1991; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
MICROELECTRONICS
FABRICATION
SEMICONDUCTOR DEVICES
ALUMINIUM ARSENIDES
ELECTRONIC CIRCUITS
GALLIUM ARSENIDES
ION BEAMS
ION IMPLANTATION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
GALLIUM COMPOUNDS
PNICTIDES
665300* - Interactions Between Beams & Condensed Matter- (1992-)