Model of plasma immersion ion implantation
Journal Article
·
· Journal of Applied Physics; (USA)
- Department of Electrical Engineering and Computer Sciences and the Electronics Research Laboratory, University of California, Berkeley, California 94720 (US)
In plasma immersion ion implantation, a target is immersed in a plasma and a series of negative high-voltage pulses are applied to implant plasma ions into the target. We develop an approximate analytical model to determine the time-varying implantation current, the total dose, and the energy distribution of the implanted ions.
- OSTI ID:
- 5394532
- Journal Information:
- Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 66:7; ISSN 0021-8979; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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