Systematic approach to MOCVD processing chemistry for epitaxial Pb(Zr{sub x}Ti{sub 1-x})O{sub 3} thin films
- Argonne National Lab., IL (United States); and others
We have developed a simplified and systematic strategy to the MOCVD synthesis of single crystal thin films of Pb(Ti{sub x}Zr{sub 1-x})O{sub 3} for 0.1 {le}x{le}1. The films were prepared on epitaxial SrRuO{sub 3} buffered on SrTiO{sub 3} substrates by using tetraethyl lead, Pb(C{sub 2}H{sub 5}){sub 4}, zirconium t-butoxide, Zr(OC(CH{sub 3}){sub 3}){sub 4} and titanium isopropoxide, Ti(OCH(CH{sub 3}){sub 2}){sub 4} as metal-organic precursors. The synthesis of these single-crystalline films provided excellent model films to study the systematic variations in the optical, dielectric, polarization, and transport properties as a function of composition and the epitaxy induced modifications in the solid solution phase diagram of this system. High values of remnant polarization (30-55 {mu}C/cm{sup 2}) were observed at all ferroelectric compositions. The remnant polarization, coercive fields, and dielectric constant exhibited a clear dependence on composition. These films exhibited both high resistivity and dielectric strength ({approximately} 10{sup 13} {Omega}-cm at 100 kV/cm and >300 kV/cm, respectively).
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 539094
- Report Number(s):
- CONF-960807--
- Country of Publication:
- United States
- Language:
- English
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