Elimination of interface defects in mismatched epilayers by a reduction in growth area
We have eliminated interface defects from the mismatched In/sub 0.05/Ga/sub 0.95/As/ (001)GaAs interface by controlling the size of the growth area. 2-..mu..m-high pillars with different lateral shapes and dimensions were defined within the GaAs substrate before the molecular beam epitaxial growth of 3500 A of In/sub 0.05/Ga/sub 0.95/As, greater than four times the critical thickness. On the pillars, the linear density of misfit dislocations was reduced from >5000 dislocations/cm for large (several hundred ..mu..m lateral dimensions) growth areas to nearly zero for 25 ..mu..m lateral dimensions. The dislocation density remains less than 800 dislocations/cm for lateral dimensions up to 100 ..mu..m. We find that there is also a decrease in dislocation density in narrow channels between the pillars; therefore, the pillars also block the glide of misfit dislocations.
- Research Organization:
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
- OSTI ID:
- 5389599
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:18; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIMENSIONS
DISLOCATIONS
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFACES
LINE DEFECTS
MOLECULAR BEAM EPITAXY
PNICTIDES
THICKNESS
THIN FILMS