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U.S. Department of Energy
Office of Scientific and Technical Information

Resonantly pumped, erbium-doped, 2. 8 micron solid state laser with high slope efficiency

Patent ·
OSTI ID:5383174
This patent describes a laser system. It comprises: a crystal having a host material doped with erbium; a laser cavity defined by first and second reflective elements at opposing ends of the crystal to form a reflective path therebetween; and resonant pumping means for directly pumping the {sup 4}I{sub 11/2} upper laser state of the erbium with a pump beam at a preselected wavelength to cause the erbium-doped crystal to produce a laser emission corresponding to the {sup 4}I{sub 11/2}-{yields} {sup 4}I{sub 13/2} laser transition having a wavelength of substantial 2.8 microns; one of the first and second reflective elements outputting a portion of the laser emission at substantially 2.8 microns.
Assignee:
Secretary of the Navy, Washington, DC (United States)
Patent Number(s):
A; US 5086432
Application Number:
PPN: US 7-705048
OSTI ID:
5383174
Country of Publication:
United States
Language:
English