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Title: Room-temperature, laser diode-pumped, Q-switched, 2 micron, thulium-doped, solid state laser

Patent ·
OSTI ID:6714642

A room-temperature, laser-pumped, Q-switched, thulium-doped, solid state laser for producing pulses of laser emission at substantially 2 microns is disclosed. In a preferred embodiment, the laser comprises: a laser cavity defined by first and second reflective path elements opposing each other on a common axis to form a reflective path there between; a laser crystal disposed in the laser cavity, the laser crystal having a host material doped with an amount of thulium activator ions sufficient to produce a laser emission at substantially 2 microns from the 3F4 to 3H6 laser transition in the thulium activator ions when the laser crystal is enabled and is pumped by a CW pump beam at a preselected wavelength; a pump laser for pumping the laser crystal with the CW pump beam at the preselected wavelength; and a Q-switch disposed in the laser cavity between the laser crystal and the second reflective element for periodically enabling the laser crystal to produce a pulsed laser emission at substantially 2 microns when the crystal is also pumped by the CW pump beam.

Research Organization:
Department of the Navy, Washington, DC (USA)
Assignee:
Department of the Navy, Washington, DC
Patent Number(s):
A US 7-501461
OSTI ID:
6714642
Resource Relation:
Other Information: This Government-owned invention available for U.S. licensing and, possibly, for foreign licensing. Copy of application available NTIS
Country of Publication:
United States
Language:
English