High quality molecular beam epitaxial growth on patterned GaAs substrates
In this letter we describe a procedure for high quality molecular beam epitaxy (MBE) growth over finely patterned GaAs substrates which is suitable for device fabrication requiring lateral definition of small (approx.1--2 ..mu..m) dimension. This method was used for the fabrication of index guided laser arrays. Yields of individual lasers exceeded 90%, and thresholds were uniform to 10%. Temperature and flux ratio dependence of faceting during MBE growth over patterned substrates is shown for temperatures ranging from 580 to 700 /sup 0/C and for As/Ga flux ratios from 1.4:1 to 4:1. The real index guided structure, which can be formed by a single MBE growth over a ridged substrate, is discussed. This technique should prove useful in the fabrication of devices which take advantage of unique features formed during regrowth by MBE.
- Research Organization:
- California Institute of Technology, Pasadena, California 91125
- OSTI ID:
- 5382792
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 47:7
- Country of Publication:
- United States
- Language:
- English
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