Optical characterization of GaAs pyramid microstructures formed by molecular beam epitaxial regrowth on pre-patterned substrates
Arrays of GaAs pyramids with square (001) bases of length 1{endash}5 {mu}m have been fabricated by molecular beam epitaxy regrowth on pre-patterned GaAs (001) substrates. The optical properties of the pyramid faces have been studied by microreflection and microtransmission imaging measurements with light ({lambda}=900{endash}1000nm) incident through the pyramid base. Digitized charge coupled device images indicate that total internal reflection occurs at the {l_brace}110{r_brace} pyramid facets and that their reflectivities are greater than 80%, provided overgrowth of the facets does not occur. These properties suggest that such structures may be suitable as the top mirror in novel micron-scale vertical microcavity devices. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204397
- Journal Information:
- Journal of Applied Physics, Vol. 90, Issue 1; Other Information: DOI: 10.1063/1.1376419; Othernumber: JAPIAU000090000001000475000001; 071113JAP; PBD: 1 Jul 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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