skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method for preparing homogeneous single crystal ternary III-V alloys

Patent ·
OSTI ID:5379234

A method is described for producing homogeneous, single-crystal III-V ternary alloys of high crystal perfection using a floating crucible system in which the outer crucible holds a ternary alloy of the composition desired to be produced in the crystal and an inner floating crucible having a narrow, melt-passing channel in its bottom wall holds a small quantity of melt of a pseudo-binary liquids composition that would freeze into the desired crystal composition. The alloy of the floating crucible is maintained at a predetermined lower temperature than the alloy of the outer crucible, and a single crystal of the desired homogeneous alloy is pulled out of the floating crucible melt, as melt from the outer crucible flows into a bottom channel of the floating crucible at a rate that corresponds to the rate of growth of the crystal.

Assignee:
Dept. of Energy, Washington, DC (United States)
Patent Number(s):
US 5047112; A
Application Number:
PPN: US 7-566930; TRN: 92-014296
OSTI ID:
5379234
Resource Relation:
Patent File Date: 14 Aug 1990
Country of Publication:
United States
Language:
English