Method for preparing homogeneous single crystal ternary III-V alloys
Abstract
A method for producing homogenous single crystal III--V ternary alloys of high crystal perfection using a floating crucible system in which the outer crucible holds a ternary alloy of the composition desired to be produced in the crystal and an inner floating crucible having a narrow, melt-passing channel in its bottom wall holds a small quantity of melt of a pseudo-binary liquidus composition which would freeze into the desired crystal composition. The alloy of the floating crucible is maintained at a predetermined lower temperature than the alloy of the outer crucible, and a single crystal of the desired homogeneous alloy is pulled out of the floating crucible melt, as melt from the outer crucible flows into a bottom channel of the floating crucible at a rate that corresponds to the rate of growth of the crystal.
- Inventors:
- Publication Date:
- Research Org.:
- Solar Energy Research Inst., Golden, CO (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 10159715
- Patent Number(s):
- PATENTS-US-A7566930
- Application Number:
- ON: DE92017037; PAN: 7-566,930
- Assignee:
- Dept. of Energy
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent Application
- Resource Relation:
- Other Information: PBD: 14 Aug 1990
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; TERNARY ALLOY SYSTEMS; SYNTHESIS; INVENTIONS; CRUCIBLES; GALLIUM ARSENIDES; INDIUM ARSENIDES; PHASE DIAGRAMS; CRYSTAL GROWTH; 360101; PREPARATION AND FABRICATION
Citation Formats
Ciszek, T F. Method for preparing homogeneous single crystal ternary III-V alloys. United States: N. p., 1990.
Web.
Ciszek, T F. Method for preparing homogeneous single crystal ternary III-V alloys. United States.
Ciszek, T F. 1990.
"Method for preparing homogeneous single crystal ternary III-V alloys". United States. https://www.osti.gov/servlets/purl/10159715.
@article{osti_10159715,
title = {Method for preparing homogeneous single crystal ternary III-V alloys},
author = {Ciszek, T F},
abstractNote = {A method for producing homogenous single crystal III--V ternary alloys of high crystal perfection using a floating crucible system in which the outer crucible holds a ternary alloy of the composition desired to be produced in the crystal and an inner floating crucible having a narrow, melt-passing channel in its bottom wall holds a small quantity of melt of a pseudo-binary liquidus composition which would freeze into the desired crystal composition. The alloy of the floating crucible is maintained at a predetermined lower temperature than the alloy of the outer crucible, and a single crystal of the desired homogeneous alloy is pulled out of the floating crucible melt, as melt from the outer crucible flows into a bottom channel of the floating crucible at a rate that corresponds to the rate of growth of the crystal.},
doi = {},
url = {https://www.osti.gov/biblio/10159715},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 14 00:00:00 EDT 1990},
month = {Tue Aug 14 00:00:00 EDT 1990}
}