Measurement of spontaneous-emission factor of AlGaAs double-heterostructure semiconductor lasers
Journal Article
·
· IEEE J. Quant. Electron.; (United States)
Experimental determination of the spontaneous-emission factor of an injection laser is presented. For a lot of conventional AlGaAs DH stripe lasers, spontaneous-emission factors of about 10-/sup 5/ were obtained from the measurement of the light intensity of a lasing mode versus the injected current. These values are in good agreement with the theoretical prediction based upon the classical wave theory. Brief discussion of the magnitude of the spontaneous-emission factor is given relating to the direct modulation characteristics of a semiconductor laser, which shows that the damping oscillation can be decreased in a laser consisting of very small active region.
- Research Organization:
- Tokyo Inst. of Tech.
- OSTI ID:
- 5375886
- Journal Information:
- IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-13:8; ISSN IEJQA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Investigation of mechanisms of multimode emission from double-heterostructure AlGaAs injection lasers with narrow stripe contacts
Measurement of spontaneous emission factor for injection lasers
Temperature dependence of spontaneous emission from AlGaAs-GaAs laser diodes
Journal Article
·
Thu Jan 31 23:00:00 EST 1985
· Sov. J. Quant. Electron. (Engl. Transl.); (United States)
·
OSTI ID:5785570
Measurement of spontaneous emission factor for injection lasers
Journal Article
·
Sun Aug 01 00:00:00 EDT 1982
· IEEE J. Quant. Electron.; (United States)
·
OSTI ID:6128811
Temperature dependence of spontaneous emission from AlGaAs-GaAs laser diodes
Journal Article
·
Mon Mar 31 23:00:00 EST 1986
· J. Appl. Phys.; (United States)
·
OSTI ID:5953151