Amorphous phase formation by solid-state reaction between polycrystalline Co thin films and single-crystal GaAs
- Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 57306 (US)
The formation of an amorphous phase between Co thin films and GaAs substrates by solid-state reaction has been investigated by transmission electron microscopy and Auger electron spectroscopy. The amorphization is ascribed to the fast diffusion of Co in GaAs. The amorphous layer, after a 300 {degree}C, 4.5 h annealing, is measured to be {similar to}40 nm in thickness and has a broad composition range. Prolonged annealing at 300 {degree}C or heat treatment at 340 {degree}C results in the crystallization of the amorphous phase. This crystallization is found to initiate from the Co/amorphous phase interface and leads to the formation of a metastable, supersaturated phase. Finally, the equilibrium condition is reached by the decomposition of this intermediate phase into CoGa and CoAs.
- OSTI ID:
- 5374927
- Journal Information:
- Applied Physics Letters; (USA), Vol. 55:15; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ARSENIC COMPOUNDS
AMORPHOUS STATE
COBALT
DIFFUSION
COBALT COMPOUNDS
GALLIUM ARSENIDES
ATOM TRANSPORT
GALLIUM COMPOUNDS
ANNEALING
AUGER ELECTRON SPECTROSCOPY
CHEMICAL COMPOSITION
HIGH TEMPERATURE
INTERFACES
MEDIUM TEMPERATURE
SYNTHESIS
THICKNESS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
ARSENIDES
DIMENSIONS
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELEMENTS
FILMS
HEAT TREATMENTS
METALS
MICROSCOPY
NEUTRAL-PARTICLE TRANSPORT
PNICTIDES
RADIATION TRANSPORT
SPECTROSCOPY
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
360602* - Other Materials- Structure & Phase Studies
360603 - Materials- Properties