MeV ion channeling studies of (111) CdTe films on (111) GaAs substrates

Journal Article · Wed Nov 15 04:00:00 EST 1989 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.343738· OSTI ID:5371450

Wilkens, B J; Farrell, H H ^[1]; Pollard, K; Erbil, A ^[2]

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1. Bell Communications Research, Room 3Z-169, 331 Newman Springs Road, Red Bank, New Jersey 07701-7020 (USA)
2. Georgia Institute of Technology, Atlanta, Georgia 30332 (USA)

Group II-VI compound semiconductors such as CdTe can be grown epitaxially on III-V materials such as GaAs. These films possess better physical properties than their bulk-grown counterparts. This work explores the (111) CdTe/(111) GaAs system by means of MeV ion channeling. Good epitaxy is found (backscatter minimum yields of 15%) for a thickness greater than 1000 A, which is remarkable considering the 14% lattice mismatch between film and substrate. A narrowing of the Cd angular scan suggests Cd atom displacement. A model based on Te vacancies is presented to describe our data.

• OSTI ID: 5371450
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 66:10; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
CHANNELING
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
DIFFRACTION
ELEMENTS
ENERGY RANGE
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION CHANNELING
MEV RANGE
PNICTIDES
POINT DEFECTS
SCATTERING
SEMIMETALS
STRUCTURAL MODELS
SUBSTRATES
SURFACE COATING
TELLURIDES
TELLURIUM
TELLURIUM COMPOUNDS
VACANCIES
X-RAY DIFFRACTION