Hydrogen diffusion and passivation in InGaAlN alloys

Conference · Mon May 01 00:00:00 EDT 1995

OSTI ID:53708

Pearton, S J; Abernathy, C R; MacKenzie, J D; Vartuli, C B ^[1]; Wilson, R G ^[2]; Zavada, J M ^[3]; Shul, R J ^[4]

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1. Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
2. Highes Research Labs., Malibu, CA (United States)
3. Army Research Office, Research Triangle Park, NC (United States)
4. Sandia National Labs., Albuquerque, NM (United States)

Hydrogen is found to readily diffuse into InGaN, InAlN and InGaAlN epitaxial layers during plasma exposures at 170-250{degree}C for 40 sec-30 min. The diffusivity of hydrogen is > 10{sup -11} cm{sup 2} {center_dot} s{sup -1} at 170{degree}C, and the native donor species are passivated by association with the hydrogen. Reactivation of these species occurs at 450-500{degree}C, but the hydrogen remains in the material until {ge} 800{degree}C.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 53708
• Report Number(s): SAND--95-0856C; CONF-950412--3; ON: DE95010889
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
DIFFUSION
GALLIUM NITRIDES
HYDROGEN
INDIUM NITRIDES
PASSIVATION
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K