Incorporation of hydrogen into III-V nitrides during processing

Journal Article · Wed May 01 00:00:00 EDT 1996 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/BF02666647· OSTI ID:420809

Pearton, S J; Abernathy, C R; Vartuli, C B ^[1]

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1. Univ. of Florida, Gainesville, FL (United States); and others

Hydrogen is readily incorporated into GaN and related alloys during wet and dry etching, chemical vapor deposition of dielectric overlayers, boiling in water, and other process steps, in addition to its effects during metalorganic chemical vapor deposition or metalorganic molecular beam epitaxial growth. The hydrogen is bound at defects or impurities and passivates their electrical activity. Reactivation of passivated shallow donors in the nitrides occurs at 450-550{degree}C, but evolution from the crystal requires much higher temperatures (>=800{degree}C for GaN). 9 refs., 9 figs.

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 420809
• Report Number(s): CONF-950661--; CNN: Grant DMR-9421109; Grant N00014-92-J-1895
• Journal Information: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 5 Vol. 25; ISSN JECMA5; ISSN 0361-5235
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BINDING ENERGY
BOILING
CHEMICAL VAPOR DEPOSITION
DIFFUSION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRONS
ETCHING
GALLIUM NITRIDES
HYDROGEN
IMPURITIES
MOLECULAR BEAM EPITAXY
PASSIVATION
PROCESSING
TEMPERATURE DEPENDENCE
VALENCE