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Irradiation stability of Pd/sub 2/Si

Conference ·
OSTI ID:5370128
The irradiation stability of thin film Pd/sub 2/Si under 400-keV Kr ion irradiation has been examined in both a conventional implanter and in the Argonne National Laboratory High Voltage Electron Microscope (HVEM). Samples irradiated in the conventional implanter at 100 and 300/sup 0/K to a dose of 1 x 10/sup 15/ Kr/cm/sup 2/ remained crystalline and ordered. Samples irradiated in the HVEM at 10/sup 0/K were observed to undergo a crystal to amorphous transformation after a dose of 7.5 x 10/sup 14/ Kr/cm/sup 2/ (approximately 3 displacements per atom). The amorphous phase was observed to crystallize in the temperature regime between 220 and 300/sup 0/K. Results indicate that the stability and amorphization of crystalline Pd/sub 2/Si is dominated by kinetics rather than by thermodynamics or a complex equilibrium structure. 17 refs., 4 figs.
Research Organization:
Los Alamos National Lab., NM (USA); Argonne National Lab., IL (USA); Cornell Univ., Ithaca, NY (USA). Dept. of Materials Science and Engineering
DOE Contract Number:
W-31109-ENG-38; W-7405-ENG-36
OSTI ID:
5370128
Report Number(s):
CONF-8708104-5; ON: DE88005930
Country of Publication:
United States
Language:
English