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Surface alloying tantalum with aluminum

Conference · · TMS (The Metallurgical Society) Paper Selection; (USA)
OSTI ID:5367861
;  [1]
  1. Univ. of Connecticut, Storrs (USA)
Aluminum ions were implanted into tantalum at 180 KV with fluences ranging from 3 x 10{sup 17} to 3 {times} 10{sup 18} ions/cm{sup 2}. The chemical compositions in the implanted layers - determined using AES, x-ray EDS, and RBS - reached {approx equal} 75 atomic % Al at the higher fluences. The microstructures - determined by transmission electron microscopy - contained only a BCC solid solution of aluminum in tantalum up to a fluence of {approx equal} 1.2 {times} 10{sup 18} ions/cm{sup 2}. A transition to an amorphous phase occurred at higher fluences, being complete at 1.9 {times} 10{sup 18} ions/cm{sup 2}. The implanted specimens were annealed for 30 minutes at temperatures from 400 to 800 C. The mechanism of the amorphous phase formation, as well as the details of its crystallization during annealing, are described.
OSTI ID:
5367861
Report Number(s):
CONF-840909--
Conference Information:
Journal Name: TMS (The Metallurgical Society) Paper Selection; (USA) Journal Volume: 56
Country of Publication:
United States
Language:
English