Defect suppression from the compound semiconductor heterointerfaces

Book · Mon Dec 30 23:00:00 EST 1996

OSTI ID:536259

Kalem, S ^[1]; Curtis, A; Hartmann, Q J; Thomas, S; Turnbull, D; Chuang, H; Bishop, S G; Stillman, G E ^[2]

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1. TUBITAK-Marmara Research Center, Gebze (Turkey)
2. Univ. of Illinois, Urbana, IL (United States). Center for Compound Semiconductor Microelectronics

The authors report on the effect of inserting ultra-thin InAs layers at the heterointerfaces on physical properties of GaAs/InGaP on GaAs and InP/GaAs on InP grown by MOCVD and MOMBE, respectively. It is shown that the insertion of ultra thin InAs layers at the heterostructure interfaces has a significant effect in eliminating defects from the interfaces.

• Sponsoring Organization: North Atlantic Treaty Organization, Brussels (Belgium); National Science Foundation, Washington, DC (United States)
• OSTI ID: 536259
• Report Number(s): CONF-960498--; ISBN 0-7803-3283-0
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
IMPURITIES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
INTERFACES
MICROSTRUCTURE
PHOTOLUMINESCENCE
POINT DEFECTS
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION