Growth and application of Group III -- Antimonides by MOVPE
Book
·
OSTI ID:536251
- Univ. of Oxford (United Kingdom). Clarendon Lab.
There are a number of important considerations in common in the growth of InP/InGaAs and InAs/GaSb superlattices. These include: the uniformity of the periodicity within the superlattice, the type of interfaces and their arrangement within the superlattice and the abruptness of those interfaces. InAs/GaSb superlattices are a small sub-set of antimonide based semiconductors which are of interest to those studying solid state physics and designing devices with infrared applications. This paper will highlight the growth, by MOVPE, of some InAs/GaSb superlattices, and compare this with published results from the growth of InGaAs/InP superlattices, particularly with respect to the issues mentioned above.
- OSTI ID:
- 536251
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
Similar Records
Studies on gas-switching sequences influence on the quality of MOVPE InGaAs/InP superlattice structures
Use of reflectance spectroscopy for in-situ monitoring of InP/InGaAsP films grown by MOVPE
Strained MQW-BH-LDs and integrated devices fabricated by selective MOVPE
Book
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:536260
Use of reflectance spectroscopy for in-situ monitoring of InP/InGaAsP films grown by MOVPE
Book
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:536278
Strained MQW-BH-LDs and integrated devices fabricated by selective MOVPE
Book
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:536310