Versatile reactive ion beam etching (RIBE) of InP-based materials using CH{sub 4}/H{sub 2}/Ar chemistry
- Kungliga Tekniska Hoegskolan, Kista (Sweden). Dept. of Electronics
Dry etching is an essential technique for fabrication of semiconductor structures with well controlled dimensions and etch profiles. The authors have investigated RIBE processes for etching InP and related materials using the non-corrosive CH{sub 4}/H{sub 2}/Ar gas chemistry. The etch rates, surface morphology and etch profiles and have been studied as a function of plasma parameters and gas mixtures. The equipment has been an inductively coupled RF ion gun with a two grids extraction system. Chamber pressure during process has been about 10{sup {minus}4} mbar. Sample temperatures depended somewhat on the energy and etch time but was always maintained below 100 C. Silicon nitride, photoresist and Ti/NiCr metal were used as mask materials.
- OSTI ID:
- 536185
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
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