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Growth of Al{sub 0.48}In{sub 0.52}As/Ga{sub 0.47}In{sub 0.53}As heterostructures lattice relaxed on GaAs and lattice matched on InP

Book ·
OSTI ID:536180
; ; ; ; ;  [1]
  1. Fraunhofer-Inst. fuer Angewandte Festkoerperphysik, Freiburg (Germany)

Two buffer layer concepts for the lattice relaxed growth of Al{sub 0.48}In{sub 0.52}As/Ga{sub 0.47}In{sub 0.53}As heterostructures on GaAs have been compared and related to the growth on InP. Thicknesses of the buffers have been intentionally kept at 1 {micro}m. Electrical data yield the optimum growth temperature of the buffer at 400 C. Based on electrical and optical data, the two buffer concepts in their extreme linear (Ga and In furnace temperatures are varied) and step graded (all furnace temperatures are constant) clearly show, that it is favorable to vary the lattice constant during buffer growth as smooth as possible.

OSTI ID:
536180
Report Number(s):
CONF-960498--; ISBN 0-7803-3283-0
Country of Publication:
United States
Language:
English