InGaAs-based mm-wave integrated subharmonic mixer exhibiting low input power requirement and low noise characteristics
Book
·
OSTI ID:536175
- Univ. of Michigan, Ann Arbor, MI (United States)
The authors have designed and fabricated an integrated InGaAs-based subharmonic mixer which showed a single-sideband conversion loss of 10.5dB and double-sideband noise temperature of 1,164 K at a very low LO power level of 1.1mW. Also demonstrated was the feasibility of integrating mixer diodes with antenna and other interconnect metal structures on InP. Simulations indicate the potential for performance improvements with L{sub c} decreasing to 9.6dB and T{sub mix} decreasing to approximately 700 K for anode sizes of 1{micro}m. A significant advantage of the InGaAs subharmonic mixers is that their P{sub LO} requirements are approximately a factor of 0.2 to 0.37 of that required by GaAs technology. Another advantage of InGaAs mixer technology is that high-performance three-terminal device technology, available on InP, could potentially be used to integrate LNA front ends and IF amplifiers with the mixers, to form high-performance monolithic millimeter-wave receivers.
- OSTI ID:
- 536175
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
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