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Title: Carrier gas-free chemical vapor deposition technique for in situ preparation of high quality YBa sub 2 Cu sub 3 O sub 7 minus. delta. thin films

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.105263· OSTI ID:5361125
;  [1]; ; ; ;  [2];  [3]
  1. Hoechst AG, Central Research II, 6230 Frankfurt, Germany (DE) Institut fuer Festkoerperphysik, TH Darmstadt, 6100 Darmstadt, Germany (DE)
  2. Hoechst AG, Central Research II, 6230 Frankfurt, Germany (DE)
  3. Institut fuer Festkoerperphysik, TH Darmstadt, 6100 Darmstadt, Germany (DE)

A new carrier gas-free metalorganic chemical vapor deposition technique was developed yielding a high deposition rate. The {beta}-dicetonate precursor compounds were synthesized with reproducible water content which is of great importance for their vapor pressure. With the technique described above {bold c}-axis oriented YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} thin films were prepared with {ital T}{sub {ital c}}({ital R}=0)=91.8 K and {ital j}{sub {ital c}}(77 K)=1.3{times}10{sup 6} A/cm{sup 2} on (100)SrTiO{sub 3} substrates and {ital T}{sub {ital c}}({ital R}=0)=91.1 K and {ital j}{sub {ital c}}(77 K)=3{times}10{sup 5} A/cm{sup 2} on (100)MgO substrates at {ital B}=0 T. The influence of the metal composition on the formation of precipitation was studied by SEM investigations.

OSTI ID:
5361125
Journal Information:
Applied Physics Letters; (United States), Vol. 59:7; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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