VLSI electronics, GaAs microelectronics
This book addresses aspects of GaAs IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapter 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, the bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-water testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high-speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs.
- OSTI ID:
- 5340808
- Country of Publication:
- United States
- Language:
- English
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42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
COMPUTERS
DESIGN
DIGITAL CIRCUITS
DIGITAL COMPUTERS
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
EQUIPMENT
FABRICATION
FIELD EFFECT TRANSISTORS
FORECASTING
FREQUENCY DEPENDENCE
FREQUENCY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GHZ RANGE
GHZ RANGE 01-100
HEAT TREATMENTS
INTEGRATED CIRCUITS
ION IMPLANTATION
MATERIALS
MATERIALS TESTING
MICROELECTRONIC CIRCUITS
MICROWAVE RADIATION
MILITARY EQUIPMENT
PACKAGING
PHYSICAL PROPERTIES
PNICTIDES
POLAR COMPOUNDS
RADIATION EFFECTS
RADIATIONS
RESOLUTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SUBSTRATES
SUPERCOMPUTERS
TESTING
TIME RESOLUTION
TIMING PROPERTIES
TRANSISTORS
USES