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U.S. Department of Energy
Office of Scientific and Technical Information

VLSI electronics, GaAs microelectronics

Book ·
OSTI ID:5340808

This book addresses aspects of GaAs IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapter 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, the bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-water testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high-speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs.

OSTI ID:
5340808
Country of Publication:
United States
Language:
English