Oxidation of Ti{sub 3}SiC{sub 2} in air

Journal Article · Tue Jul 01 04:00:00 EDT 1997 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1837846· OSTI ID:533123

Barsoum, M W; El-Raghy, T ^[1]; Ogbuji, L U.J.T. ^[2]

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1. Drexel Univ., Philadelphia, PA (United States). Dept. of Materials Engineering
2. National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center

Polycrystalline samples of Ti{sub 3}SiC{sub 2} were oxidized in air in the 900 to 1,400 C temperature range. The oxidation was parabolic with parabolic rate constants, k{sub p}, that increased from 1 {times} 10{sup {minus}9} to 1 {times} 10{sup {minus}4} kg{sup 2}/m{sup 4}s as the temperature increased from 900 to 1,400 C, respectively, which yielded an activation energy of 370 {+-} 20 kJ/mol. The scale that forms was dense, adhesive, resistant to thermal cyclings and layered. The outer layer was pure TiO{sub 2} (rutile), and the inner layer consisted of mixture of SiO{sub 2} and TiO{sub 2}. The results are consistent with a model in which growth of the oxide layer occurs by the inward diffusion of oxygen and the simultaneous outward diffusion of titanium and carbon. The presence of small volume fractions ({approx} 2%) of TiC{sub x} in Ti{sub 3}SiC{sub 2} were found to have a deleterious effect on the oxidation kinetics.

• Sponsoring Organization: National Science Foundation, Washington, DC (United States)
• OSTI ID: 533123
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 7 Vol. 144; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
AIR
CHEMICAL REACTION KINETICS
OXIDATION
PROTECTIVE COATINGS
SILICON CARBIDES
TEMPERATURE DEPENDENCE
TITANIUM CARBIDES