Phase reaction and diffusion path of the SiC/Ti system

Journal Article · Sun Jun 01 04:00:00 EDT 1997 · Metallurgical and Materials Transactions. A, Physical Metallurgy and Materials Science

DOI:https://doi.org/10.1007/s11661-997-0275-3· OSTI ID:514764

Naka, M; Feng, J C; Schuster, J C ^[1]

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1. Osaka Univ. (Japan). Joining and Welding Research Inst.

Bonding of SiC to SiC was conducted using Ti foil at bonding temperatures from 1,373 to 1,773 K in vacuum. The total diffusion path between SiC and Ti was investigated in detail at 1673 K using Ti foil with a thickness of 50 {micro}m. At a bonding time of 0.3 ks, TiC at the Ti side and a mixture of Ti{sub 5}Si{sub 3}C{sub x} and TiC at the SiC side were formed, yielding the structure sequence of {beta}-Ti/Ti + TiC/Ti{sub 5}Si{sub 3}C{sub x} + TiC/SiC. Furthermore, at the bonding time of 0.9 ks, a Ti{sub 5}Si{sub 3}C{sub x} layer phase appeared between SiC and the mixture of Ti{sub 5}Si{sub 3}C{sub x} and TiC. Upon the formation of Ti{sub 3}SiC{sub 2} (T phase) after the bonding time of 3.6 ks, the complete diffusion path was observed as follows: {beta}-Ti/Ti + TiC/Ti{sub 5}Si{sub 3}C{sub x} + TiC/Ti{sub 5}Si{sub 3}C{sub x}/Ti{sub 3}SiC{sub 2}/SiC. The activation energies for growth of TiC, Ti{sub 5}Si{sub 3}C{sub x}, and Ti{sub 3}SiC{sub 2} were 194, 242, and 358 kJ/mol, respectively.

• Sponsoring Organization: USDOE
• OSTI ID: 514764
• Journal Information: Metallurgical and Materials Transactions. A, Physical Metallurgy and Materials Science, Journal Name: Metallurgical and Materials Transactions. A, Physical Metallurgy and Materials Science Journal Issue: 6 Vol. 28; ISSN MMTAEB; ISSN 1073-5623
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
BONDING
CERAMICS
COMPOSITE MATERIALS
GRAIN GROWTH
INTERFACES
PHASE STUDIES
SILICON CARBIDES
TEMPERATURE RANGE 1000-4000 K
TITANIUM
TITANIUM CARBIDES
TITANIUM SILICIDES