Phase reaction and diffusion path of the SiC/Ti system
- Osaka Univ. (Japan). Joining and Welding Research Inst.
Bonding of SiC to SiC was conducted using Ti foil at bonding temperatures from 1,373 to 1,773 K in vacuum. The total diffusion path between SiC and Ti was investigated in detail at 1673 K using Ti foil with a thickness of 50 {micro}m. At a bonding time of 0.3 ks, TiC at the Ti side and a mixture of Ti{sub 5}Si{sub 3}C{sub x} and TiC at the SiC side were formed, yielding the structure sequence of {beta}-Ti/Ti + TiC/Ti{sub 5}Si{sub 3}C{sub x} + TiC/SiC. Furthermore, at the bonding time of 0.9 ks, a Ti{sub 5}Si{sub 3}C{sub x} layer phase appeared between SiC and the mixture of Ti{sub 5}Si{sub 3}C{sub x} and TiC. Upon the formation of Ti{sub 3}SiC{sub 2} (T phase) after the bonding time of 3.6 ks, the complete diffusion path was observed as follows: {beta}-Ti/Ti + TiC/Ti{sub 5}Si{sub 3}C{sub x} + TiC/Ti{sub 5}Si{sub 3}C{sub x}/Ti{sub 3}SiC{sub 2}/SiC. The activation energies for growth of TiC, Ti{sub 5}Si{sub 3}C{sub x}, and Ti{sub 3}SiC{sub 2} were 194, 242, and 358 kJ/mol, respectively.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 514764
- Journal Information:
- Metallurgical and Materials Transactions. A, Physical Metallurgy and Materials Science, Journal Name: Metallurgical and Materials Transactions. A, Physical Metallurgy and Materials Science Journal Issue: 6 Vol. 28; ISSN MMTAEB; ISSN 1073-5623
- Country of Publication:
- United States
- Language:
- English
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