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Geometrical and electronic structure of Si(001) and Si(111) surfaces: A status report

Journal Article · · J. Vac. Sci. Technol.; (United States)
DOI:https://doi.org/10.1116/1.570492· OSTI ID:5330552
A critical review of recent studies of the geometrical and electronic structure of the Si(001) and Si(111) surfaces is given. Emphasis is placed on low-energy electron diffraction (LEED) studies of the geometrical structure, photoelectron spectroscopy studies of the electronic structure, and theoretical studies of the electronic and geometric structure of the Si(111)--(2 x 1), Si(111)--(7 x 7), Si(111)--(1 x 1)X, and Si(001)--(2 x 1) surfaces.
Research Organization:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
OSTI ID:
5330552
Journal Information:
J. Vac. Sci. Technol.; (United States), Journal Name: J. Vac. Sci. Technol.; (United States) Vol. 17:1; ISSN JVSTA
Country of Publication:
United States
Language:
English