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Investigation of reactive magnetron sputter deposited ZnSe for solar cell application. Final subcontract report

Technical Report ·
OSTI ID:5330465
As a higher bandgap semiconductor with reasonable lattice constant, ZnSe is an attractive alternative to CdS for heterojunction solar cells. Previous attempts to deposit doped n-type polycrystalline ZnSe films usually produced film resistivities from 10/sup 5/ to 10/sup 8/ ohm-cm unless GaAs substrates were used. This report presents results of one year's research into depositing high-conductivity ZnSe on glass substrates by reactive magnetron sputter deposition, using pure metal sputter targets of Zn and In, Ga, and Al dopants. Using substrate temperatures as low as 150/sup 0/C and sputter parameters and H/sub 2/Se injection rates that maximize the Zn-to-Se ratio in the films, ZnSe bulk resistivities were reduced to as low as 40 ohm-cm. The most effective dopant to date was In, co-sputtered with Zn to In atomic concentrations of 3%. AES measurements show an average 45/52 ratio of Zn to Se; a low Zn content for such conducting films. Extended studies of dopants' effects are warranted, as are heterojunction studies using thin-film CuInSe/sub 2/ and CdTe substrates.
Research Organization:
Jet Propulsion Lab., Pasadena, CA (USA)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5330465
Report Number(s):
SERI/STR-211-2750; ON: DE85016851
Country of Publication:
United States
Language:
English