Equipment simulation of selective tungsten deposition

Journal Article · Sat Feb 01 04:00:00 EST 1992 · Journal of the Electrochemical Society; (United States)

DOI:https://doi.org/10.1149/1.2069259· OSTI ID:5329643

Werner, C; Ulacia, J I; Hopfmann, C; Flynn, P ^[1]

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1. Siemens AG, ZFE SPT 33, Otto-Hahn-Ring 6, D-8000 Munich 83 (DE)

This paper presents the numerical modeling of a cold wall reactor for selective tungsten chemical vapor deposition. In a two dimensional simulation the mass and heat transfer equations were solved considering the five chemical species H{sub 2}, WF{sub 6}, HF, WF{sub x}, and SiF{sub y}. Detailed models for multicomponent diffusion and for the autocatalytic tungsten nucleation process were implemented. Model results are in good agreement with experimental findings. The simulations are used to study the impact of reactor design on selectivity.

• OSTI ID: 5329643
• Journal Information: Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 139:2; ISSN JESOA; ISSN 0013-4651
• Country of Publication: United States
• Language: English

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CHEMICAL COATING
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