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Analysis of passive film growth on Al-Ta and Al-W alloys by dynamic imaging microellipsometry

Journal Article · · Journal of the Electrochemical Society; (United States)
OSTI ID:5325632
 [1]
  1. Dept. of Materials Science and Engineering, Johns Hopkins Univ., Baltimore, MD (US)

This paper reports that aluminum alloys containing super-saturated solid solution additions of tantalum or tungsten exhibit a markedly increased resistance to pitting corrosion. These alloys are prepared by nonequilibrium method such as sputter deposition. The addition of 8 atom percent (a/0) Ta to Al has been demonstrated to increase the pitting potential by 700 mV. Ex situ x-ray photoelectron spectroscopy (XPS) analysis has shown that the passive film in that system is thin and rich in Ta{sub 2}O{sub 5}. It is proposed that the Ta{sub 2}O{sub 5} provides a barrier layer that impedes Cl{sup {minus}} ingress and subsequent breakdown. The addition of 9 a/o W to Al has been demonstrated to increase the pitting potential by up to 2600 mV. Ex situ analysis demonstrated that the concentration of WO{sub 2} and WO{sub 3} in the passive film is less than 0.5 a/o. As a result it was proposed that the W additions stabilized the structure of the oxide film, enhancing its resistance to localized attack. Heat-treatment of these alloys results in the precipitation of a second phase that has been shown to be detrimental to the improved pitting resistance. This is not surprising since these alloys are nonequilibrium alloys and the solubility limit for W or Ta in aluminum is less than 0.2%.

OSTI ID:
5325632
Journal Information:
Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 139:2; ISSN JESOA; ISSN 0013-4651
Country of Publication:
United States
Language:
English

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