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Title: Indium phosphide/cadmium sulfide thin-film solar cells. Quarterly technical progress report No. 1, June 1979-August 1979

Technical Report ·
DOI:https://doi.org/10.2172/5321916· OSTI ID:5321916

Cadmium sulfide and InP thin films were prepared by thermal evaporation and planar reactive deposition, respectively. Polycrystalline CdS films up to 10 ..mu..m thick showed absorption losses of less than 10% over the 0.6- to 1.0-..mu..m wavelength range. A threefold increase in lateral grain size was achieved when CdS/ITO/GLASS structures were partially recrystallized in flowing H/sub 2/S/Ar at 550/sup 0/C. InP deposited onto (100) InP semiinsulating substrate at substrate temperatures as low as 260/sup 0/C was n-type with room-temperature mobilities as high as 1500 cm/sup 2//Vsec. The CdS and InP films were integrated into an all-thin-film InP/CdS/ITO/GLASS structure.

Research Organization:
Hughes Research Labs., Malibu, CA (USA)
DOE Contract Number:
EG-77-C-01-4042
OSTI ID:
5321916
Report Number(s):
DSE-4042-T9
Country of Publication:
United States
Language:
English