Method for making high-current, ohmic contacts between semiconductors and oxide superconductors

Patent · Tue Jan 28 04:00:00 EST 1992

OSTI ID:5319758

Talvacchio, J J

This patent describes a method for making ohmic contacts between a semiconductor and a high Tc Cu-oxide material having superconducting capability, in which current can pass between the semiconductor and the Cu-oxide material without going through a degraded interface. It comprises depositing a buffer layer which is essentially inert to Cu-oxide material on a first portion of a semiconductor substrate which comprises silicon, and depositing a high Tc Cu-oxide material having superconducting capability on the buffer layer, and depositing a first contact layer of gold on the Cu-oxide material, and depositing a second contact layer on a second portion of the semiconductor substrate, the second contact layer being of aluminum; and then depositing an interconnecting layer of at least one of gold, silver, aluminum, titanium, chromium, or a refractory metal silicide on the second contact layer and on at least a portion of the first contact layer, to electrically connect the second contact layer and the first contact layer.

• Assignee: Westinghouse Electric Corp., Pittsburgh, PA (United States)
• Patent Number(s): US 5084437; A
• Application Number: PPN: US 7-486474
• OSTI ID: 5319758
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
665412 -- Superconducting Devices-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
BUFFERS
CHALCOGENIDES
CHROMIUM
COPPER COMPOUNDS
COPPER OXIDES
CURRENTS
ELECTRIC CONTACTS
ELECTRIC CURRENTS
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
GOLD
HIGH-TC SUPERCONDUCTORS
LAYERS
MATERIALS
METALS
OXIDES
OXYGEN COMPOUNDS
REFRACTORIES
SEMICONDUCTOR MATERIALS
SILICIDES
SILICON COMPOUNDS
SILVER
SUPERCONDUCTORS
TITANIUM
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS