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U.S. Department of Energy
Office of Scientific and Technical Information

Method for making high-current, ohmic contacts between semiconductors and oxide superconductors

Patent ·
OSTI ID:5319758

This patent describes a method for making ohmic contacts between a semiconductor and a high Tc Cu-oxide material having superconducting capability, in which current can pass between the semiconductor and the Cu-oxide material without going through a degraded interface. It comprises depositing a buffer layer which is essentially inert to Cu-oxide material on a first portion of a semiconductor substrate which comprises silicon, and depositing a high Tc Cu-oxide material having superconducting capability on the buffer layer, and depositing a first contact layer of gold on the Cu-oxide material, and depositing a second contact layer on a second portion of the semiconductor substrate, the second contact layer being of aluminum; and then depositing an interconnecting layer of at least one of gold, silver, aluminum, titanium, chromium, or a refractory metal silicide on the second contact layer and on at least a portion of the first contact layer, to electrically connect the second contact layer and the first contact layer.

Assignee:
Westinghouse Electric Corp., Pittsburgh, PA (United States)
Patent Number(s):
US 5084437; A
Application Number:
PPN: US 7-486474
OSTI ID:
5319758
Country of Publication:
United States
Language:
English