Characterization of amorphous hydrogenated carbon nitride films prepared by plasma-enhanced chemical vapor deposition using a helical resonator discharge

Journal Article · Tue Jul 01 04:00:00 EDT 1997 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.365595· OSTI ID:531737

Kim, J H; Ahn, D H ^[1]; Kim, Y H; Baik, H K ^[2]

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1. LG Electronics Research Center, 16 Woomyeon-Dong, Seocho-Gu, Seoul 137-140 (Korea)
2. Department of Metallurgical Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-ku, Seoul 120-749 (Korea)

Amorphous hydrogenated carbon nitride thin films (a-CN{sub x}:H) have been prepared by plasma-enhanced chemical vapor deposition of N{sub 2} and CH{sub 4} gases using a helical resonator discharge. The structural and optical properties of the deposited a-CN{sub x}:H films have been systematically studied as a function of the substrate temperature and radio frequency (rf) substrate bias. The chemical structure and elemental composition of the a-CN{sub x}:H films were characterized by Fourier transform infrared spectroscopy (FT-IR), x-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. The optical properties of the films were evaluated using transmission ultraviolet{endash}visible spectroscopy. The morphology of the films was investigated by scanning electron microscopy and atomic force microscopy. The FT-IR and XPS studies demonstrate the presence of carbon{endash}nitrogen bonds with hydrogenated components in the films. The film composition ratio N/C was found to vary from 0.127 to 0.213 depending on the deposition conditions. The Raman spectra, showing the G and D bands, indicate that the a-CN{sub x}:H films have a graphitic structure. It can be found that the optical band-gap E{sub g} of a-CN{sub x}:H films is associated with graphitic clusters, while the decrease in E{sub g} is correlated with an increase in the size and number of graphitic clusters. Combining the results of Raman and optical measurements, it can be concluded that a progressive graphitization of the films occurs with increasing the substrate temperature and rf substrate bias power, corresponding to bias voltage. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 531737
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 82; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CARBON COMPOUNDS
CARBON NITRIDES
CHEMICAL BONDS
CHEMICAL VAPOR DEPOSITION
ENERGY GAP
HYDROGEN
HYDROGEN ADDITIONS
INFRARED SPECTRA
PHOTOELECTRON SPECTROSCOPY
RAMAN SPECTRA
SCANNING ELECTRON MICROSCOPY
STRUCTURAL CHEMICAL ANALYSIS
THIN FILMS
ULTRAVIOLET SPECTRA
VISIBLE SPECTRA