Thermally stimulated luminescence from x-irradiated porous silicon

Journal Article · Sun Jun 01 04:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119243· OSTI ID:531691

Cooke, D W; Bennett, B L; Farnum, E H; Hults, W L; Muenchausen, R E; Smith, J L ^[1]

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1. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

We have measured thermally stimulated luminescence from light-emitting porous silicon that has been x irradiated at room temperature and heated to 400{degree}C. The glow curve exhibits peaks at 103, 155, 219, and 271{degree}C, with additional maxima occurring above 400{degree}C. Each of the peaks emits similar emission spectra characterized by a band with a maximum near 720 nm and 0.39 eV full width at half-maximum. Following x irradiation at room temperature, the sample exhibits well-known photoluminescence, but after heating to 400{degree}C, the loss of hydrogen renders the sample nonphotoluminescent. However, thermally stimulated luminescence can be repeatedly induced. Observation of thermally stimulated luminescence is unambiguous evidence for the existence of an insulating surface layer on porous silicon. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 531691
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
PHOTOLUMINESCENCE
POROUS MATERIALS
RADIATION EFFECTS
SILICON
TEMPERATURE RANGE 0400-1000 K
THERMOLUMINESCENCE
X RADIATION