Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

Patent · Mon Mar 02 23:00:00 EST 1992

OSTI ID:5315420

Ashby, C I.H.; Myers, D R

This patent describes a process for selectively photochemically etching a semiconductor material. It comprises introducing at least one impurity into at least one selected region of a semiconductor material to be etched to increase a local impurity concentration in the at least one selected region relative to an impurity concentration in regions of the semiconductor material adjacent thereto, for reducing minority carrier lifetimes within the at least one selected region relative to the adjacent regions for thereby providing a photochemical etch-inhibiting mask at the at least one selected region; and etching the semiconductor material by subjecting the surface of the semiconductor material to a carrier-driven photochemical etching reaction for selectively etching the regions of the semiconductor material adjacent the at least one selected region having the increase impurity concentration; wherein the step of introducing at least one impurity is performed so as not to produce damage to the at least one selected region before any etching is performed.

• Assignee: Dept. of Energy, Washington, DC (United States)
• Patent Number(s): US 5092957; A
• Application Number: PPN: US 7-441025
• OSTI ID: 5315420
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400500 -- Photochemistry
665300* -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER LIFETIME
CHEMISTRY
CONTROL
ETCHING
FABRICATION
FILMS
IMPURITIES
LIFETIME
MATERIALS
PHOTOCHEMISTRY
PROCESS CONTROL
SEMICONDUCTOR MATERIALS
SURFACE FINISHING
THIN FILMS