Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication
The patent describes an electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconducto
- Assignee:
- Dept. of Energy, Washington, D.C.
- Patent Number(s):
- US 4880493; A
- Application Number:
- PPN: US 7-207487--A
- OSTI ID:
- 6963537
- Country of Publication:
- United States
- Language:
- English
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75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CHARGE CARRIERS
CHEMISTRY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON-HOLE COUPLING
ELECTRONIC EQUIPMENT
EQUIPMENT
ETCHING
FABRICATION
HEAT TREATMENTS
ION IMPLANTATION
MATERIALS
PHOTOCHEMISTRY
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
SURFACE FINISHING