Ion damage calculations in crystalline silicon

Conference · Mon Jul 01 04:00:00 EDT 1985

OSTI ID:5314155

Oen, O S

Damage profiles in crystalline silicon produced by light (B) and heavy (Bi) ions with energies from 10 to 100 keV were studied using the computer program MARLOWE (version 12). The program follows not only the incident ion collision by collision, but also any Si target atom that is set into motion through an energetic collision. Thus, the transport effect of the complete cascade of recoiled target atoms is included in the damage profile. The influence of channeling was studied for Si(100) using beam tilt angles from the surface normal of 0/sup 0/, 3/sup 0/ and 7/sup 0/ about the (001) or (011) axes. The effects of channeling on the damage profile are twofold: first, there is a large reduction of the central damage peak; second, there is a component of the damage profile that extends considerably deeper into the target than that found in conventional studies using a random target assemblage. The influence of amorphous overlayers of SiO/sub 2/ on the damage and implantation profiles in the Si(100) substrate has also been investigated.

• Research Organization: Oak Ridge National Lab., TN (USA)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5314155
• Report Number(s): CONF-850813-2; ON: DE85016931
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
CHANNELING
CHARGED PARTICLES
CRYSTALS
ELECTROMAGNETIC RADIATION
ELEMENTS
ION IMPLANTATION
IONS
MONOCRYSTALS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMIMETALS
SILICON
VISIBLE RADIATION