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Vanadia reactions with yttria stabilized zirconia

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.340327· OSTI ID:5312094

The reaction of vanadia films with yttria stabilized single-crystal cubic and polycrystalline cubic-tetragonal zirconias was studied using Rutherford backscattering (RBS) and x-ray diffraction, with some selected depth profiling studies. Vandium on zirconia readily oxidizes at 500 /sup 0/C to form vanadia films. With increasing temperature, small amounts of vanadia diffuse into the zirconia. Near 650 /sup 0/C the vanadia forms a eutectic solution at the surface and massive diffusion into the ZrO/sub 2/ occurs. With rapid heating much of the vanadia volatilizes; with slow heating the vanadia diffuses large distances into the zirconia. Near 800 /sup 0/C the vanadia principally reacts with yttria to form yttrium vanadate. At 980 /sup 0/C and above, vanadia is completely reacted. Zirconia coated with materials which do not form a eutectic mixture (tantala, tantalum, vanadium) showed little reaction or diffusion at 900--1000 /sup 0/C, but massive dissolution when a eutectic is formed (vanadia, chromia+vanadia). Yttria preferentially diffuses toward the surface when a reaction takes place to form YVO/sub 4/ . When yttria is sequestered as the vanadate, the zirconia changes phase from cubic to monoclinic. Little difference in reactivity is observed between single-crystal and polycrystalline zirconia due to eutectic solution formation, which, with the phase separation, produces a very corroded surface.

Research Organization:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, New York 14853
OSTI ID:
5312094
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:11; ISSN JAPIA
Country of Publication:
United States
Language:
English