HgCdTe photodiodes formed by double-layer liquid phase epitaxial growth

Journal Article · Fri Aug 15 00:00:00 EDT 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91958· OSTI ID:5310729

Shin, S H; Vanderwyck, A H.B.; Kim, J C; Cheung, D T

High-performance HgCdTe photodiodes have been formed by successive growth of p- and n-type epitaxial layers on CdTe substrates via the liquid phase epitaxy technique. These diodes exhibit high resistance-area (R/sub 0/ A) products at high temperatures: R/sub 0/ A products of 1 and 30 ..cap omega.. cm/sup 2/ have been observed at 283 and 200 K, respectively, for Hg/sub 0.68/Cd/sub 0.32/Te (lambda/sub co/=4.0 ..mu..m at 200 K). The saturation current density for the grown junction photodiode at 300 K is 0.12 A/cm/sup 2/.

• Research Organization: Rockwell International Science Center, Thousand Oaks, California 91360
• OSTI ID: 5310729
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 37:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
CRYSTAL GROWTH
CURRENT DENSITY
EPITAXY
FLUIDS
JUNCTIONS
LAYERS
LIQUIDS
LOW TEMPERATURE
MATERIALS
MEDIUM TEMPERATURE
MERCURY COMPOUNDS
MERCURY TELLURIDES
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PHOTODIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SUBSTRATES
TELLURIDES
TELLURIUM COMPOUNDS