P-I-N CdTe gamma-ray detectors by liquid phase epitaxy (LPE)

Conference · Sat Dec 31 23:00:00 EST 1983

OSTI ID:6556533

Shin, S H; Niizawa, G T; Pasko, J G; Bostrup, G L; Ryan, F J; Khoshnevisan, M; Westmark, C I; Fuller, C

A new device concept of CdTe gamma ray detectors has been demonstrated by using p+(HgCdTe)-n(CdTe)-n+(HgCdTe) diode structures. Both p+ and n/sup +/-type Hg/sub 0.25/Cd/sub 0.75/Te epilayers were grown by the liquid phase epitaxy (LPE) technique on semi-insulating CdTe sensor elements. The LPE-grown P-I-N structure offers potential advantages for p-n junction formation and ohmic contact over standard ion-implanted diodes or Schottky barrier devices. Detectors with active areas of 2 mm/sup 2/ were fabricated. Resolutions of 10 keV were obtained for the 122 keV gamma peak of Co/sup 57/ at room temperature.

• Research Organization: Rockwell International Corp., Thousand Oaks, CA (USA). Science Center; Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6556533
• Report Number(s): SAND-84-1036C; CONF-841156-1; ON: DE84012276
• Country of Publication: United States
• Language: English

Related Subjects

440101* -- Radiation Instrumentation-- General Detectors or Monitors & Radiometric Instruments
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BETA DECAY RADIOISOTOPES
CDTE SEMICONDUCTOR DETECTORS
COBALT 57
COBALT ISOTOPES
DAYS LIVING RADIOISOTOPES
DETECTION
ELECTRON CAPTURE RADIOISOTOPES
ENERGY RESOLUTION
EPITAXY
GAMMA DETECTION
INTERMEDIATE MASS NUCLEI
ISOTOPES
LIQUID PHASE EPITAXY
MEASURING INSTRUMENTS
NUCLEI
ODD-EVEN NUCLEI
RADIATION DETECTION
RADIATION DETECTORS
RADIOISOTOPES
RESOLUTION
SEMICONDUCTOR DETECTORS