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Hydrogen permeation in ion implanted polycrystalline nickel

Conference · · TMS (The Metallurgical Society) Paper Selection; (USA)
OSTI ID:5309011
; ;  [1]
  1. Massachusetts Institute of Technology, Cambridge (USA)
Electrochemical hydrogen permeation experiments were performed on polycrystalline nickel implanted with Ar, P and Pt in the fluence range of 10{sup 15}/cm{sup 2} to 10{sup 17}/cm{sup 2}. The hydrogen transient behavior was found to depend on implanted elements and fluence. The effective diffusion coefficient of hydrogen on all implanted nickels was lower than that of unimplanted nickel, suggesting that the damage resulting from the process of implantation acted as trap sites for hydrogen. The steady-state permeation current of Ar-implanted nickel decreased with increasing fluence, but those of P- and Pt-implanted nickel were found to decrease at low fluence ({approximately} 10{sup 15}/cm{sup 2}) and increase at high fluence ({approximately} 10{sup 17}/cm{sup 2}) as compared with that of unimplanted nickel. The results were explained in terms of the structure of the implanted layer which changes depending on fluence and the electrochemical properties of the implanted element, and further suggested a possible relation between hydrogen and metalloids segregated at grain boundaries and intergranular cracking.
OSTI ID:
5309011
Report Number(s):
CONF-840909--
Conference Information:
Journal Name: TMS (The Metallurgical Society) Paper Selection; (USA) Journal Volume: 56
Country of Publication:
United States
Language:
English