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Stress related anisotropy studies in DC-magnetron sputtered TbCo and TbFe films

Conference · · IEEE (Institute of Electrical and Electronics Engineers) Transactions on Magnetics; (USA)
OSTI ID:5306396
; ;  [1]
  1. Magnetics Technology Center, Carnegie Mellon Univ. (US)
A series of TbCo films and a series of TbFe films were prepared by de-magnetron sputtering at different deposition powers and Ar sputtering pressures. It was found that anisotropy decreased with an increase of deposition power. The authors discuss how anisotropy showed a peak within the range of 2.5 mtorr to 11.5 mtorr of Ar sputtering pressures. The perpendicular magnetic anisotropy of films which were still attached to their substrates and films which had been removed from their substrates were compared. The percentage change in K/sub u/, which occurred when the film was removed from its substrate, correlated with the rise and fall of perpendicular anisotropy, although changes were also typically large at 2.5 mtorr of Ar sputtering pressure. Changes in K/sub u/ after removal from the substrate were as large as 46% in TbFe films deposited at 2.5 mtorr of Ar sputtering pressure. Larger percentage changes in K/sub u/ was found in de-magnetron sputtered films than were previously reported for rf-sputtered TbFe and TbCo films. The films deposited onto thick polycarbonate substrates had the largest anisotropy and also suffered the largest percentage change in anisotropy when they were removed from the substrate.
OSTI ID:
5306396
Report Number(s):
CONF-890309--
Conference Information:
Journal Name: IEEE (Institute of Electrical and Electronics Engineers) Transactions on Magnetics; (USA) Journal Volume: 25:5
Country of Publication:
United States
Language:
English