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Focused ion beam processes for high-T/sub c/ superconductors

Journal Article · · J. Vac. Sci. Technol., B; (United States)
DOI:https://doi.org/10.1116/1.584319· OSTI ID:5304837
Focused ion beam (FIB) processes have been developed for Y--Ba--Cu--O superconductor films. A Y--Cu liquid metal ion source has been fabricated, using a Y/sub 67/ --Cu/sub 33/ eutectic alloy as the ion source. As-sputtered Y--Ba--Cu--O film etch rate ratios to GaAs(100) and Si(100) substrates are 0.28 and 1.4 for 130-keV Au/sup +/ FIB ion etching, respectively. Y--Ba--Cu--O submicron patterns have been demonstrated by using FIB lithography and Cl/sub 2/ reactive ion beam etching. Moreover, a Y--Ba--Cu--O superconducting line with 4-..mu..m linewidth has been fabricated by annealing an as-sputtered Y--Ba--Cu--O line pattern. T/sub c/ control of Y--Ba--Cu--O film has been achieved by 200-keV Ne/sup +/, using conventional ion implantation and 300 keV Si/sup + +/ FIB ion implantation.
Research Organization:
NEC Corporation, Miyazaki, Kawasaki 213, Japan
OSTI ID:
5304837
Journal Information:
J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 6:3; ISSN JVTBD
Country of Publication:
United States
Language:
English

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