[ital p]-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg

Journal Article · Mon Jan 03 00:00:00 EST 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.110870· OSTI ID:5303353

Rubin, M; Newman, N; Chan, J S; Fu, T C; Ross, J T ^[1]

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1. Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)

Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. The principal technical problem that limits device applications has been achieving controllable [ital p]-type doping. Molecular beam epitaxy assisted by a nitrogen ion beam produced [ital p]-type GaN when doped via ion implantation, diffusion, or coevaporation of Mg. Nearly intrinsic [ital p]-type material was also produced without intentional doping, exhibiting hole carrier concentrations of 5[times]10[sup 11] cm[sup [minus]3] and hole mobilities of over 400 cm[sup 2]/V/s at 250 K. This value for the hole mobility is an order of magnitude greater than previously reported.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5303353
• Journal Information: Applied Physics Letters; (United States), Vol. 64:1; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM NITRIDES
MAGNESIUM ADDITIONS
CARRIER DENSITY
CARRIER MOBILITY
CRYSTAL DOPING
DIFFUSION
EVAPORATION
ION IMPLANTATION
MOLECULAR BEAM EPITAXY
P-TYPE CONDUCTORS
ALLOYS
EPITAXY
GALLIUM COMPOUNDS
MAGNESIUM ALLOYS
MATERIALS
MOBILITY
NITRIDES
NITROGEN COMPOUNDS
PHASE TRANSFORMATIONS
PNICTIDES
SEMICONDUCTOR MATERIALS
360606* - Other Materials- Physical Properties- (1992-)
360601 - Other Materials- Preparation & Manufacture